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Volumn 40, Issue 3, 1996, Pages 239-251

Study of the effect of introducing a bottom ITO layer in an a-Si:H p-i-n type solar cell

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBANCE; AMORPHOUS SILICON SOLAR CELLS; FILM THICKNESS; INDIUM TITANIUM OXIDE LAYER; METAL CONTACTS; OPTICAL ADMITTANCE METHOD; PHOTOVOLTAIC PERFORMANCE;

EID: 0030196756     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(95)00091-7     Document Type: Article
Times cited : (12)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.