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Volumn 40, Issue 3, 1996, Pages 239-251
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Study of the effect of introducing a bottom ITO layer in an a-Si:H p-i-n type solar cell
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORBANCE;
AMORPHOUS SILICON SOLAR CELLS;
FILM THICKNESS;
INDIUM TITANIUM OXIDE LAYER;
METAL CONTACTS;
OPTICAL ADMITTANCE METHOD;
PHOTOVOLTAIC PERFORMANCE;
AMORPHOUS SILICON;
CHARGE CARRIERS;
CRYSTAL STRUCTURE;
ENERGY EFFICIENCY;
HYDROGENATION;
OPTIMIZATION;
PHOTOVOLTAIC EFFECTS;
REFRACTIVE INDEX;
SEMICONDUCTING INDIUM COMPOUNDS;
THIN FILMS;
SOLAR CELLS;
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EID: 0030196756
PISSN: 09270248
EISSN: None
Source Type: Journal
DOI: 10.1016/0927-0248(95)00091-7 Document Type: Article |
Times cited : (12)
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References (12)
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