Electrooptic characterization of modulation-doped field-effect transistors with monolithically-integrated test fixtures

Optical and Quantum Electronics

Volumn 28, Issue 7, 1996, Pages 867-874

  Zeng, A ^a   Jackson, M K ^a   Van Hove, M ^b   De Raedt, W ^b  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROOPTICAL EFFECTS; FABRICATION; GATES (TRANSISTOR); MONOLITHIC INTEGRATED CIRCUITS; OPTICAL SWITCHES; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SWITCHING FUNCTIONS;

DELAY TIMES; ELECTROOPTIC CHARACTERIZATION; ELECTROOPTIC MEASUREMENT; GATE ACCESS STRUCTURES; LATTICE MATCHED DEVICES; MODULATION DOPED FIELD EFFECT TRANSISTORS; MONOLITHICALLY INTEGRATED TEST FIXTURES; PHOTOCONDUCTIVE SWITCHES; SWITCHING TIMES;

FIELD EFFECT TRANSISTORS;

EID: 0030196430     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00820153     Document Type: Article

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