Resonant inelastic light scattering by electronic excitations in tunable quantum wire structures

Surface Science

Volumn 361-362, Issue , 1996, Pages 783-787

  Schedelbeck, G ^a   Silveira, E ^a   Strenz, R ^a   Bockelmann, U ^a   Abstreiter, G ^a   Bohm G ^a   Weimann, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; LIGHT SCATTERING; PLASMA CONFINEMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

CHARGE DENSITY EXCITATION; CONFINED PLASMON; ELECTRONIC EXCITATION; RESONANT INELASTIC LIGHT SCATTERING; SEMI TRANSPARENT SCHOTTKY GATE; SPIN FLIP INTRASUBBAND SINGLE PARTICLE EXCITATIONS; TUNABLE DOUBLET STRUCTURE; TUNABLE QUANTUM WIRE STRUCTURES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030196240     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00533-X     Document Type: Article

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