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Optical and Quantum Electronics

Volumn 28, Issue 7, 1996, Pages 875-896

Monolithically-integrated optoelectronic circuit for ultrafast sampling of a dual-gate field-effect transistor

(6) Allam, J a Baynes, N De B a,b Cleaver, J R A a,b Ogawa, K c Mishima, T c Ohbu, I c

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

c HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL GATE FIELD EFFECT TRANSISTORS; ELECTROMAGNETIC TRANSIENTS; ELECTROOPTIC SAMPLING METHOD; MICROFABRICATED AIRBRIDGES; MONOLITHIC INTEGRATION; MONOLITHICALLY INTEGRATED OPTOELECTRONIC CIRCUITS; MULTI TERMINAL DEVICES; PHOTOCONDUCTIVE SWITCHES; ULTRAFAST SAMPLING;

CAPACITANCE MEASUREMENT; ELECTROMAGNETIC FIELD MEASUREMENT; ELECTROMAGNETIC WAVE PROPAGATION; ELECTROOPTICAL EFFECTS; FIELD EFFECT TRANSISTORS; OPTICAL SWITCHES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; WAVEGUIDES;

INTEGRATED OPTOELECTRONICS;

EID: 0030196205 PISSN: 03068919 EISSN: None Source Type: Journal
DOI: 10.1007/BF00820154 Document Type: Article

Times cited : (9)

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