Electron-phonon scattering rates in GaAs/AlGaAs 2DEG samples below 0.5 K

Surface Science

Volumn 361-362, Issue , 1996, Pages 537-541

  Mittal, A ^a   Wheeler, R G ^a   Keller, M W ^a,c   Prober, D E ^a   Sacks, R N ^b  

^a YALE UNIVERSITY   (United States)

^b UNITED TECHNOLOGIES RESEARCH CENTER   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON SCATTERING; ELECTRONS; HEAT TREATMENT; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON HEATING; ELECTRON TEMPERATURE; ELECTRON-ELECTRON DEPHASING; JOULE HEATING; LOCALIZATION;

HETEROJUNCTIONS;

EID: 0030196043     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00464-5     Document Type: Article

References (12)

1. G. Bergmann, W. Wei, Y. Zhou and R.M. Mueller, Phys. Rev. B 41 (1990) 7386.
2. G. Bergmann, Phys. Rep. 107 (1984) 1.
3. P. Santhanam, S. Wind and D.E. Prober, Phys. Rev. B 35 (1987) 3188.
4. S. Hikami, A.I. Larkin and Y. Nagaoka, Prog. Theor. Phys. 63 (1980) 707.
5. A. Mittal, M.W. Keller, R.G. Wheeler, D.E. Prober and R.N. Sacks, Physica B 194 (1994) 167. This paper considered only cooling by electron out-diffusion, and thus does not give a complete picture of the heat flow.
6. P.J. Price, J. Appl. Phys. 53 (1982) 6863.
7. V. Karpus, Sov. Phys. Semicond. 22 (1988) 268.
8. A.K.M. Wennberg, S.N. Ytterboe, C.M. Gould, H.M. Bozler, J. Klem and H. Morkoc, Phys. Rev. B 34 (1986) 4409.
9. H. Takayama, Z. Phys. 259 (1973) 421.
10. J. Rammer and A. Schmid, Phys. Rev. B 4 (1986) 1352.
11. M.Y. Reizer and A.V. Sergeyev, Sov. Phys. JETP 63 (1986) 616.
12. D. Belitz and S. Das Sarma, Phys. Rev. B 36 (1987) 7701.