Exciton relaxation in self-organized InAs/GaAs quantum dots

Surface Science

Volumn 361-362, Issue , 1996, Pages 770-773

  Heitz, R ^a   Grundmann, M ^a   Ledentsov, N N ^a,b   Eckey, L ^a   Veit, M ^a   Bimberg, D ^a   Ustinov, V M ^b   Egorov, A Yu ^b   Zhukov, A E ^b   Kop'ev, P S ^b   Alferov, Zh I ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Gallium arsenide; Indium arsenide; Infrared absorption; Light scattering; Quantum effects

Indexed keywords

ARSENIC COMPOUNDS; ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; ESTIMATION; EXCITONS; LIGHT ABSORPTION; LIGHT SCATTERING; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; PHOTONS; RELAXATION PROCESSES; SPECTRUM ANALYSIS;

ENERGY SEPARATION; EXCITON RELAXATION; INDIUM ARSENIDE; INFRARED ABSORPTION; PHOTOLUMINESCENCE EXCITATION SPECTRA; QUANTUM EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030196040     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00530-4     Document Type: Article

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