Impact of reactive ion etching induced carbon contamination on oxidation of silicon

Journal of the Electrochemical Society

Volumn 143, Issue 7, 1996, Pages 2378-2387

  Tsuchiaki, M ^a   Kvitek, R J ^b   Parks, C ^b   Murphy, R J ^b   Ohiwa, T ^a   Watanabe, T ^a  

^a Toshiba America Inc   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL BONDS; CONTAMINATION; DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); OXIDATION; REACTION KINETICS; REACTIVE ION ETCHING; SILICA; SURFACE ROUGHNESS; THIN FILMS; X RAY SPECTROSCOPY;

OXIDATION IMPAIRMENT; THERMAL OXIDE GROWTH;

SEMICONDUCTING SILICON;

EID: 0030195952     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837011     Document Type: Article

References (23)

1. G. S. Oehrlein, R. M. Tromp, Y. H. Lee, and E. J. Petrillo. Appl. Phys. Lett., 45, 420 (1984).
2. S. W. Pang, D. D. Rathman, D. J. Silversmith, R. W. Mountain, and P. D. DeGraff, J. Appl. Phys., 54, 3272 (1983).
3. M. Tsuchiaki, R. J. Kvitek, T. Ohiwa, H. Takato, and T. Watanabe, Abstract 324, p. 485, The Electrochemical Society Meeting Abstracts, Vol. 95-1, Reno, NV, May 21-26, 1995.
4. M. Tsuchiaki, R. J. Kvitek, T. Ohiwa, H. Takato, and T. Watanabe, in Proceedings of 5th International Symposium on ULSI Science and Technology/1995, E. M. Middesworth and H. Massoud, Editors, PV 95-5, pp. 218-229, The Electrochemical Society Proceedings Series, Pennington, NJ (1995).
5. J. Blanc, Appl. Phys. Lett., 33, 424 (1978).
6. E. A. Irene, This Journal, 125, 1708 (1978).
7. Z. Zheng, R. E. Tressler, and, K. E. Spear, ibid., 137, 854 (1990).
8. J. Schmitt and R. Helbig, ibid., 141, 2262 (1994).
9. A. Kazor, C. Jeynes, and I. W. Boyd, Appl. Phys. Lett., 65, 1572 (1994).
10. B. E. Deal and A. S. Grove, J. Appl. Phys., 36, 3770 (1965).
11. W. Ting, H. Hwang, J. Lee, and D. L. Kwong, ibid., 70, 1072 (1991).
12. S. Dimitrijev, D. Sweatmen, and H. B. Harrison, Appl. Phys. Lett., 62, 1539 (1993).
13. T. Morimoto, H. S. Momose, Y. Ozawa, K. Yamabe, and H. Iwai, IEDM Tech. Dig., 429, (1990).
14. S. M. Sze, VLSI Technology, p. 206, McGraw-Hill, New York (1983).
15. J. M. Sung, C. Y. Lu, M. L. Chen, and S. J. Hillenius, IEDM Tech. Dig., 447, (1989).
16. F. M. Ross and J. M. Gibson, Phys. Rev. Lett., 68, 1782, (1992).
17. R. S. Ridley, T. Brozek, and J. Ruzyllo, Abstract 347, p. 527, The Electrochemical Society Meeting Abstracts, Vol. 95-1, Reno, NV, May 21-26, 1995.
18. B. Hornetz, H-J. Michel, and, J. Halbritter, J. Mater. Res., 9, 3088 (1994).
19. J. S. Shor, I. Grimberg, B-Z. Weiss, and, A. D. Kurtz, Appl.Phys.Lett., 62, 2836 (1993).
20. D. Alok, B. J. Baliga, and P. K. McLarty, IEEE Electron Device Lett., EDL-15, 424 (1994).
21. J. M. Eldridge, J. O. Moore, G. Olive, and V. Dunton, This Journal, 137, 2266 (1990).
22. C. P. Ho and J. D. Plummer, ibid., 126, 1516 (1979).
23. C. P. Ho and J. D. Plummer, ibid., 126, 1523 (1979).