Carrier transport simulation for bulk AlxGa1-xAs with a Γ-L-X band structure based on Lei-Ting balance equations

Solid-State Electronics

Volumn 39, Issue 7, 1996, Pages 971-975

  Cao, J C ^a   Lei, X L ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; FERMI LEVEL; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS;

ELECTRON NUMBER; ELECTRON TEMPERATURE; ELECTRON VELOCITY; LEI-TING BALANCE EQUATION THEORY;

SEMICONDUCTOR DEVICES;

EID: 0030195709     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00418-1     Document Type: Review

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