Magnetotransport of electrons in arrays of wires in Si/Si0.7 Ge0.3 heterostructures

Surface Science

Volumn 361-362, Issue , 1996, Pages 673-676

  Holzmann, M ^a   Tobben D ^a,d   Baumgartner, P ^a   Abstreiter, G ^a   Kriele, A ^b   Lorenz, H ^b   Schaffler F ^c,e  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY OF MUNICH   (Germany)

^c DAIMLER AG   (Germany)

^d SIEMENS AG   (Germany)

^e JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Electrical transport measurements; Magnetic phenomena; Quantum effects; Silicon germanium

Indexed keywords

BAND STRUCTURE; ELECTRIC VARIABLES MEASUREMENT; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; MAGNETIC FIELDS; MAGNETIC VARIABLES MEASUREMENT; MAGNETORESISTANCE; OSCILLATIONS; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES;

ELECTRICAL TRANSPORT MEASUREMENTS; MAGNETORESISTANCE OSCILLATIONS; MAGNETOTRANSPORT MEASUREMENT; QUANTUM EFFECTS; SILICON GERMANIUM;

HETEROJUNCTIONS;

EID: 0030195321     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00497-9     Document Type: Article

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