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Volumn 361-362, Issue , 1996, Pages 550-555

Low temperature magnetotransport of 2D electron and hole systems in high-mobility Si-Si1-xGex heterostructures

(12) Dunford, R B a Newbury, R a Stadnik, V A a Fang, F F b Clark, R G a McKenzie, R H a Starrett, R P a Mitchell, E E a Wang, P J b Chu, J O b Ismail, K E b Meyerson, B S b

a UNIVERSITY OF NEW SOUTH WALES (Australia)

b IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

Electrical transport; Heterostructures; Silicon germanium

Indexed keywords

FRACTIONAL QUANTUM HALL EFFECT; HIGH MOBILITY HETEROSTRUCTURES; INSULATING PHASES; LANDAU LEVELS; TWO VALLEY SYSTEM;

ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; HALL EFFECT DEVICES; INTERFACES (MATERIALS); MAGNETIC FIELDS; MAGNETIC VARIABLES MEASUREMENT; PHASE DIAGRAMS; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

HETEROJUNCTIONS;

EID: 0030194747 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(96)00467-0 Document Type: Article

Times cited : (9)

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