Ultrathin silicon oxide films deposited by synchrotron irradiation of condensed layers of silanes and water

Thin Solid Films

Volumn 280, Issue 1-2, 1996, Pages 101-106

  Moore, J F ^a,b,c   Strongin, D R ^a  

^a STONY BROOK UNIVERSITY   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Chemical vapour deposition (CVD); Growth mechanism; Silicon oxide; X ray photoelectron spectroscopy (XPS)

Indexed keywords

CARBIDES; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; SILANES; SILICA; STOICHIOMETRY; SYNCHROTRON RADIATION; WATER; X RAY PHOTOELECTRON SPECTROSCOPY;

NEAR EDGE X RAY ABSORPTION FINE STRUCTURE; PHOTON ABSORPTION; SYNCHROTRON IRRADIATION;

ULTRATHIN FILMS;

EID: 0030194212     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08177-1     Document Type: Article

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