CBE growth of InP using BPE and TBP: A comparative study

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 104-111

  Kim, C W ^a   Stringfellow, G B ^a   Sadwick, L P ^a  

^a University of Utah   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL BEAM EPITAXY; EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; MORPHOLOGY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; TEMPERATURE;

BISPHOSPHINOETHANE; GROWTH RATE; TERTIARYBUTYLPHOSPHINE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030194178     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00033-4     Document Type: Article

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