Electron microscopic interfacial analysis of diamond film grown on silicon substrate

Journal of Materials Research

Volumn 11, Issue 7, 1996, Pages 1783-1786

  Jiang, N ^a,b   Hatta, A ^a   Ito, T ^a   Zhang, Z ^b   Sasaki, T ^a   Hiraki, A ^a  

^a OSAKA UNIVERSITY   (Japan)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRON MICROSCOPY; INTERFACES (MATERIALS); NUCLEATION; SILICON WAFERS; TWINNING;

HIGH RESOLUTION ELECTRON MICROSCOPY; HOT FILAMENT CHEMICAL VAPOR DEPOSITION; PRECURSOR PHASE;

DIAMOND FILMS;

EID: 0030193999     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1996.0223     Document Type: Article

References (13)

1. K. Kobayashi, S. Karasawa, and T. Watanabe, J. Cryst. Growth 99, 1211 (1990).
2. B. E. Williams and J. T. Glass, J. Mater. Res. 4, 373 (1989).
3. C. P. Sung and H. C. Shih, J. Mater. Res. 7, 105 (1992).
4. N. Jiang, B. W. Sun, Z. Zhang, and Z. Lin, J. Mater. Res. 9, 2702 (1994).
5. M. A. George, A. Burger, W. E. Collins, J. L. Davidson, A. V. Barnes, and N. H. Tolk, J. Appl. Phys. 76, 4099 (1994).
6. J. Singh and M. Vellaikal, J. Appl. Phys. 73, 2883 (1993).
7. B. R. Stoner, G-H. M. Ma, S. D. Wottetr, and J. T. Glass, Phys. Rev. B 45, 11 067 (1992).
8. H. Kawarda, J. S. Ma, J. T. Suzuki, T. Ito, H. Mori, H. Fujita, and A. Hiraki, Jpn. J. Appl. Phys. 26, 1963 (1987).
9. A. Saeed, P. A. Gaskell, and D. A. Jefferson, Philos. Mag. B 66, 174 (1992).
10. J. C. Angus, M. Ssunkara, S. R. Sahaida, and J. T. Glass, J. Mater. Res. 7, 3001 (1992).
11. N. Jiang, Z. Zhang, B. W. Sun, and D. Shi, Appl. Phys. Lett. 63, 329 (1993).
12. G-H. M. Ma, Y. H. Lee, and J. T. Glass, J. Mater. Res. 5, 2373 (1990).
13. K. Minowa and K. Sumino, Phys. Rev. Lett. 69, 320 (1992).