Co-integration of high speed InP-based HBTs and RTDs using chemical beam epitaxy

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 454-459

  Chen, W L ^a   Munns, G O ^a   Wang, X ^a   Haddad, G I ^a  

^a The Department of Civil and Environmental Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; DIGITAL INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; NAND CIRCUITS; NEGATIVE RESISTANCE; SEMICONDUCTING INDIUM PHOSPHIDE; TUNNEL DIODES;

BISTABLE MODE; CO INTEGRATION; DIFFERENTIAL CURRENT GAIN; NOR GATE; RESONANT TUNNELING DIODES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030193937     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01078-5     Document Type: Article

References (6)

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3. G.O. Munns, W.L. Chen and G.I. Haddad, Proc. of the 94 EMC Conf., Boulder CO., June 1994.
4. T.P.E. Broekaert and C.G. Fonstad, IEEE Trans. Electron Dev. 39 (1992) 533.
5. W.L. Chen, G.O. Munns, J.R. East and G.I. Haddad, IEEE Trans. Electron Dev. 41 (1994) 155.
6. T.C.L.G. Sollner, Phys. Rev. Lett. 59 (1987) 1622.