Metal-non-metal transition at the crossover from antidots to quantum dots

Surface Science

Volumn 361-362, Issue , 1996, Pages 925-929

  Lutjering G ^a   Weiss, D ^a   Tank, R W ^a   Von Klitzing, K ^a   Hulsmann A ^b   Jakobus, T ^b   Kohler K ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Electrical transport; Gallium arsenide; Heterojunctions; Semiconductor semiconductor heterostructures; Tunneling

Indexed keywords

CRYSTAL LATTICES; ELECTRIC RESISTANCE; ELECTRON TUNNELING; HETEROJUNCTIONS; INSULATING MATERIALS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

ALUMINUM GALLIUM ARSENIDE; ANTIDOTS; METAL NONMETAL TRANSITION;

ELECTRON TRANSPORT PROPERTIES;

EID: 0030193655     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00566-3     Document Type: Article

References (8)

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