Geometric and electronic factors determining the differences in reactivity of H2 on Cu(100) and Cu(111)

Surface Science

Volumn 359, Issue 1-3, 1996, Pages 45-53

  Kratzer, P ^a   Hammer, B ^a,b   Norskov J K ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

Chemisorption; Copper; Density functional calculations; Hydrogen; Low index single crystal surfaces; Models of surface chemical reactions; Sticking

Indexed keywords

ADSORPTION; CHEMISORPTION; COPPER; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; HYDROGEN; INTERFACIAL ENERGY; MATHEMATICAL MODELS; MOLECULAR BEAMS; SINGLE CRYSTALS; SURFACES;

DENSITY FUNCTIONAL THEORY; ELECTRONIC EFFECTS; ENERGY BARRIER; LOW INDEX SINGLE CRYSTAL SURFACES; METAL SURFACE REACTIVITY THEORY; REACTION GEOMETRIES; STICKING;

DISSOCIATION;

EID: 0030193521     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00309-3     Document Type: Article

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