Growth of Fe on Si (100) at room temperature and formation of iron silicide

Thin Solid Films

Volumn 280, Issue 1-2, 1996, Pages 171-177

  Ruhrnschopf K ^a   Borgmann, D ^a   Wedler, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Growth mechanism; Iron; Silicides; X ray photoelectron spectroscopy (XPS)

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CALCULATIONS; FILM GROWTH; INTERFACES (MATERIALS); IRON; IRON COMPOUNDS; LOW ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; STOICHIOMETRY; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

GROWTH MECHANISM; IRON SILICIDES; LAYER BY LAYER GROWTH; ROOM TEMPERATURE;

METALLIC FILMS;

EID: 0030193514     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08248-4     Document Type: Article

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