Properties of metal-polyaniline Schottky barriers

Journal of Applied Polymer Science

Volumn 61, Issue 3, 1996, Pages 561-565

  Chaudhari, Hemangi K ^a   Kelkar, Deepali S ^a  

^a INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CONDUCTIVE PLASTICS; CURRENT VOLTAGE CHARACTERISTICS; HYDROCHLORIC ACID; IODINE; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING;

BARRIER HEIGHT; ELECTRONIC PARAMETER; FORMIC ACID; IDEALITY FACTOR; METAL POLYANILINE SCHOTTKY BARRIER; METHYLENE BLUE; RICHARDSON CONSTANT;

SEMICONDUCTOR JUNCTIONS;

EID: 0030193334     PISSN: 00218995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1097-4628(19960718)61:3<561::AID-APP20>3.0.CO;2-2     Document Type: Article

References (6)

1. S. M. Sze, Physics of semiconductor devices, Wiley Eastern Limited, 245 (1993).
2. E.G. Streetman, Solid State Electronic Devices, Prentice Hall of India, New Delhi, 183 (1991).
3. M. Campos, B. Bello, Jr., J. Phys. D: Appl. Phys., 26, 1274 (1993).
4. S. S. Pandey, S. C. K. Misra, B. D. Malhotra, Subbas Chandra, J. Appl. Polym. Sci., 44, 911, (1992).
5. M. Angelopoulos, G. E. Asturias, S. P. Ermer, A. Ray, E. M. Scherr, A. G. MacDiarmid, M. Akthar, Z. Kiss, and A. J. Epstein, Mol. Cryst. Liq. Cryst., 160, 151 (1988).
6. C. Y. Chang and S. M. Sze, Solid State Electron, 13, 727 (1970).