Engineering of the nonradiative transition rates in modulation-doped multiple-quantum wells

IEEE Journal of Quantum Electronics

Volumn 32, Issue 7, 1996, Pages 1155-1160

  Veliadis, J V D ^a,c,d   Khurgin, J B ^a,e,f,g   Ding, Y J ^b,d,h,i  

^a Johns Hopkins University   (United States)

^b BOWLING GREEN STATE UNIVERSITY   (United States)

^c NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^d JOHNS HOPKINS UNIVERSITY   (United States)

^e ITMO UNIVERSITY   (Russian Federation)

^f POLYTECHNIC UNIVERSITY   (United States)

^g PHILIPS RESEARCH LABORATORIES   (Netherlands)

^h JILIN UNIVERSITY   (China)

ⁱ PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ELECTRON TRANSITIONS; ELECTRONS; HETEROJUNCTIONS; IMPURITIES; LASERS; PHONONS; RELAXATION PROCESSES; SEMICONDUCTOR DOPING;

ACOUSTIC PHONON; BARRIER THICKNESS; DOUBLE ASYMMETRIC COUPLED QUANTUM WELL; IMPURITY SCATTERING; INTERSUBBAND LASERS; NONRADIATIVE TRANSITION RATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030193098     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.517015     Document Type: Article

References (23)

1. L. Esaki and R. Tsu, "Superlattice and negative differential conductivity in semiconductors," IBM J. Res. Develop., vol. 14, pp. 61-65, 1970.
2. R. F. Kazarinov and R. A. Suris, "Possibility of the amplification of electromagnetic waves in a semiconductor with a superlattice," Sov. Phys. - Semicond., vol. 5, pp. 707-711, 1971.
3. A. Kastalsky, V. J. Goldman, and J. Abeles, "Possibility of infrared laser in a resonant tunneling structure," Appl. Phys. Lett., vol. 59, pp. 2636-2638, 1991.
4. J. P. Loehr, J. Singh, R. K. Mains, and G. I. Haddad, "Theoretical studies of the applications of resonant tunneling diodes as intersubband laser and interband excitonic modulators," Appl. Phys. Lett., vol. 59, pp. 2070-2072, 1991.
5. S. I. Borenstain and J. Katz, "Evaluation of the feasibility of a far-infrared laser based on intersubband transitions in GaAs quantum wells," Appl. Phys. Lett., vol. 55, pp. 654-656, 1989.
6. J. Faist, F. Capasso, C. Sirtori, D. Sivco, A. L. Hutchinson, S. N. G. Chu, and A. Y. Cho, "Mid-infrared field-tunable intersubband electroluminescence at room temperature by photon-assisted tunneling in coupled-quantum wells," Appl. Phys. Lett., vol. 64, pp. 1144-1146, 1994.
7. _, "Quantum-well intersub-band electroluminescent diode at λ = 5 μm," Electron. Lett., vol. 29, pp. 2230-2231, 1993.
8. G. Sun and J. B. Khurgin, "Optically pumped four-level infrared laser based on intersubband transitions in multiple quantum wells: Feasibility study," IEEE J. Quantum Electron., vol. 29, pp. 1104-1111, 1993.
9. J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, and A. Y. Cho, "Quantum cascade laser," Science, vol. 264, pp. 553-556, 1994.
10. P. J. Price, "Two-dimensional electron transport in semiconductor layers," Ann. Phys., vol. 133, pp. 217-239, 1981.
11. T. Kawamura, S. Das Sarma, R. Jalabert, and J. K. Jain, "Low-temperature energy relaxation in AlGaAs/GaAs heterojunctions," Phys. Rev. B, vol. 42, pp. 5407-5410, 1990.
12. R. Ferreira and G. Bastard, "Evaluation of some scattering times for electrons in unbiased and biased single- and multiple-quantum-well structures," Phys. Rev. B, vol. 40, pp. 1074-1086, 1989.
13. D. Y. Oberli, D. R. Wake, M. V. Klein, J. Klem, T. Henderson, and H. Morkoc, "Time-resolved raman scattering in GaAs quantum wells," Phys. Rev. Lett., vol. 59, pp. 696-699, 1987.
14. J. Faist, F. Capasso, C. Sirtori, D. L. Sivco, A. L. Hutchinson, S. N. G. Chu, and A. Y. Cho, "Measurement of the intersubband scattering rate in semiconductor quantum wells by excited state differential absorption spectroscopy," Appl. Phys. Lett., vol. 63, pp. 1354-1356, 1993.
15. J. W. Bales, K. A. McIntosh, T. C. L. G. Sollner, W. D. Goodhue, and E. R. Brown, "Observation of optically pumped intersubband emission from quantum wells," SPIE Proc., vol. 1283, 1990, pp. 74-81.
16. J. Faist, C. Sirtori, F. Capasso, L. Pfeiffer, and K. W. West, "Phonon limited intersubband lifetimes and linewidths in a two-dimensional electron gas," Appl. Phys. Lett., vol. 64, pp. 872-874, 1994.
17. M. Helm, P. England, E. Colas, F. DeRosa, and S. J. Allen, Jr., "Intersubband emission from semiconductor superlattices excited by sequential resonant tunneling," Phys. Rev. Lett., vol. 63, pp. 74-77, 1989.
18. B. F. Levine, "Quantum-well infrared photodetectors," J. Appl. Phys., vol. 74, pp. R1-R81, 1993.
19. Z. R. Wasilewski, H. C. Liu, and M. Buchanan, "Studies of Si segregation in GaAs using current-voltage characteristics of quantum well infrared photodetectors," J. Vac. Sci. Technol. vol. B12, pp. 1273-1276, 1994.
20. G. Bastard, Wave Mechanics Applied to Semiconductors Heterostructures. Paris, France: Les Editions de Physique, 1990, ch. 3.
21. B. K. Ridley, "The electron-phonon interaction in quasitwo-dimensional semiconductor quantum well structures," J. Phys. C, Solid State Phys., vol. 15, pp. 5899-5917, 1982.
22. G. Sun, L. Friedman, and R. A. Soref, "Intersubband lasing lifetimes of SiGe/Si and GaAs/AlGaAs multiple quantum well structures," Appl. Phys. Lett., vol. 66, pp. 3425-3427, 1995.
23. R. A. Soref, "Silicon based optoelectronics," in Proc. IEEE, vol. 81, pp. 1687-1706, 1993.