SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 361-362, Issue , 1996, Pages 26-29

Composite fermions around Landau level filling factor v = 3/2

(6) Du, R R a,b Yeh, A S a Stormer, H L c Tsui, D C a Pfeiffer, L N c West, K W c

a PRINCETON UNIVERSITY (United States)

b UNIVERSITY OF UTAH (United States)

c LUCENT TECHNOLOGIES (United States)

Author keywords

Electrical transport; Hall effect; Quantum effects; Semiconductor semiconductor heterostructures

Indexed keywords

ACTIVATION ENERGY; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; ENERGY GAP; HALL EFFECT; HETEROJUNCTIONS; MAGNETIC FIELDS; OSCILLATIONS; SEMICONDUCTOR MATERIALS;

COMPOSITE FERMION; CYCLOTRON EFFECTIVE MASS; FRACTIONAL QUANTUM HALL EFFECT; LANDAU LEVEL FILLING FACTOR; QUANTUM EFFECTS; SHUBNIKOV DE HAAS OSCILLATIONS; SPIN SPLIT LEVELS;

QUANTUM THEORY;

EID: 0030193036 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(96)80104-X Document Type: Article

Times cited : (4)

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