Effects of oxidation on electronic states and photoluminescence properties of porous Si

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 7 PART A, 1996, Pages

  Koizumi, Tomohiro ^a   Obata, Koji ^a   Tezuka, Yasuhisa ^b   Shin, Shik ^b   Koshida, Nobuyoshi ^a   Suda, Yoshiyuki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Band gap; Electronic states; Optical gap; Oxidation; Photoemission spectroscopy; Photoluminescence; Porous Si; Quantum sized effect

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; CRYSTAL STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXIDATION; PHOTOEMISSION; PHOTOLUMINESCENCE; POROUS MATERIALS;

ELECTRON IMPACT; ENERGY BAND GAP PEAK ENERGY; FULL WIDTH AT HALF MAXIMUM; OXYGEN BONDING; SKELETAL STRUCTURE; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;

POROUS SILICON;

EID: 0030192766     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l803     Document Type: Article

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