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Surface Science

Volumn 361-362, Issue , 1996, Pages 243-246

Anomalous transport of indirect excitons in coupled AlAs/GaAs quantum wells

(6) Butov, L V a,b Zrenner, A a Hagn, M a Abstreiter, G a Bohm G a Weimann, G a

a WALTER SCHOTTKY INSTITUT (Germany)

b INSTITUTE OF SOLID STATE PHYSICS (Russian Federation)

Author keywords

Electrical transport; Photoluminescence; Quantum wells; Semiconductor semiconductor heterostructures

Indexed keywords

DIFFUSION; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MAGNETIC FIELDS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUPERFLUID HELIUM;

COUPLED QUANTUM WELLS; SEMICONDUCTOR SEMICONDUCTOR HETEROSTRUCTURES; TIME OF FLIGHT METHOD;

EXCITONS;

EID: 0030192748 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(96)00394-9 Document Type: Article

Times cited : (13)

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