Fermi contour of the 2D electron layer at a GaAs/AlxGa1-xAs heterojunction subject to in-plane magnetic fields

Surface Science

Volumn 361-362, Issue , 1996, Pages 509-512

  Smrcka L ^a   Vasek P ^a   Kolacek J ^a   Jungwirth, T ^a   Cukr, M ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

Density functional calculations; Electrical transport measurements; Gallium arsenide; Heterojunctions; Infrared absorption spectroscopy; Molecular beam epitaxy; Semiconductor semiconductor interfaces

Indexed keywords

ABSORPTION SPECTROSCOPY; CALCULATIONS; ELECTRON CYCLOTRON RESONANCE; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; FERMI SURFACE; INFRARED SPECTROSCOPY; MAGNETIC FIELDS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

CYCLOTRON EFFECTIVE MASS; DENSITY FUNCTIONAL CALCULATIONS; ELECTRON MOTION; FERMI CONTOUR; LANDAU LEVELS;

HETEROJUNCTIONS;

EID: 0030192739     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00457-8     Document Type: Article

References (6)

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