High fluence implantation of Cu, Fe and Ti in A1N: Depth profiling by RBS and RNRA

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 114, Issue 3-4, 1996, Pages 269-275

  Borowski, Michael ^a   Traverse, Agnès ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; CHEMICAL BONDS; COPPER; ION IMPLANTATION; IONS; IRON; SPUTTERING; TEMPERATURE; TITANIUM;

DEPTH PROFILING; HIGH FLUENCE IMPLANTATION; OSWALD RIPENING PROCESS;

ALUMINA;

EID: 0030192708     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)00147-4     Document Type: Article

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