Optical and transport studies of highly acceptor doped GaAs/AlGaAs quantum wells

Surface Science

Volumn 361-362, Issue , 1996, Pages 420-423

  Ferreira, A C ^a   Buyanov, A V ^a   Holtz, P O ^a   Sernelius, B E ^a   Monemar, B ^a   Mauritz, O ^b   Ekenberg, U ^b   Sundaram, M ^c   Campman, K ^c   Merz, J L ^c   Gossard, A C ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; ELECTRIC EXCITATION; ELECTRON TRANSPORT PROPERTIES; EXCITONS; HALL EFFECT; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE MEASUREMENT; THERMAL EFFECTS;

HOPPING CONDUCTION; MOBILITY;

OPTICAL PROPERTIES;

EID: 0030192699     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00435-9     Document Type: Article

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