Selective InAs growth by chemical beam epitaxy

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 334-338

  Shiralagi, K ^a   Walther, M ^a   Tsui, R ^a   Goronkin, H ^a  

^a Phoenix Corporation Research Laboratories   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CRYSTALLOGRAPHY; ELECTRIC PROPERTIES; MASKS; MORPHOLOGY; OPTIMIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SILICON NITRIDE; SURFACES; TUNNEL DIODES;

INDIUM ARSENIDE; PEAK TO VALLEY CURRENT RATIO; RESONANT INTERBAND TUNNELING DIODES; SELECTIVE GROWTH; VERTICAL SIDEWALLS;

EPITAXIAL GROWTH;

EID: 0030192174     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00003-6     Document Type: Article

References (6)

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