MBE growth physics: Application to device technology

Microelectronics Journal

Volumn 27, Issue 4-5, 1996, Pages 257-296

  Herman, Marian A ^a,b   Sitter, Helmut ^c  

^a INSTITUTE OF VACUUM TECHNOLOGY   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL GROWTH; HETEROJUNCTIONS; MATHEMATICAL MODELS; MICROSTRUCTURE; MONTE CARLO METHODS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; SURFACES;

LATTICE MATCHED SYSTEM; LATTICE MISMATCHED SYSTEM; STRAIN INDUCED EFFECTS; SURFACE MIGRATION;

MOLECULAR BEAM EPITAXY;

EID: 0030192171     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)00059-3     Document Type: Review

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