Photodetection at 3.65 μm in the atmospheric window using InAs0.91Sb0.09/GaAs heteroepitaxy

Semiconductor Science and Technology

Volumn 11, Issue 7, 1996, Pages 1127-1130

  Podlecki, J ^a   Gouskov, L ^a   Pascal, F ^a   Pascal Delannoy, F ^a   Giani, A ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; PHOTOCONDUCTIVITY; SEMICONDUCTOR DEVICE STRUCTURES; SPECTRUM ANALYSIS; TEMPERATURE CONTROL; TRANSPARENCY; VAPOR PHASE EPITAXY;

ATMOSPHERIC WINDOW;

PHOTODETECTORS;

EID: 0030191977     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/7/026     Document Type: Article

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