The effects of oxygen precipitates on the electrical properties of silver impurities in p-type silicon

Physica Status Solidi (A) Applied Research

Volumn 156, Issue 1, 1996, Pages 169-174

  Adegboyega, G A ^a   Passari, L ^b   Butturri, M A ^b   Susi, E ^c  

^a OBAFEMI AWOLOWO UNIVERSITY   (Nigeria)

^b UNIVERSITY OF FERRARA   (Italy)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL GROWTH FROM MELT; ELECTRIC PROPERTIES; IMPURITIES; INFRARED SPECTROSCOPY; OXYGEN; PRECIPITATION (CHEMICAL); SILVER; SUBSTRATES;

FOUR POINT PROBE; GETTERING TECHNIQUE; INFRARED ABSORPTION SPECTROSCOPY MEASUREMENTS; PRECIPITATES;

SEMICONDUCTING SILICON;

EID: 0030191094     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211560120     Document Type: Article

References (25)

1. E. G. COLAS, E. R. WEBER, and R. HULL, Mater. Sci. Forum. 10/12, 881 (1986).
2. A. OURMAZD, Mater. Res. Soc. Proc. 59, 331 (1986).
3. M. L. POLIGNANO, G. F. CEROFOLINI, H. BENDER, C. CLAEYS, and J. REFFLE, phys. stat. sol. (a) 103, 307 (1987).
4. A. POGGI, M. REICHE, and E. SUSI, IEEE Trans. Electron Devices 34, 1496 (1987).
5. T. I. KAMINS and S. Y. CHIANG, J. appl. Phys. 58, 2559 (1985).
6. K. SCHMALZ, F.-G. KIRSCHT, S. NIESE, I. BAHASKAJA, M. KITTLER, H. RICHTER, J. SCHÖNEICH, and W. SEIFERT, phys. stat. sol. (a) 89, 389 (1985).
7. M. SANO, M. HORAI, M. MIYAZAKI, N. FUJINO, and T. SHIRAIWA, Japan. J. appl. Phys. 27, 1220 (1988).
8. G. A. ADEGBOYEGA and A. POGGI, J. Physique (III) 1, 1503 (1991).
9. J. ZHU, G. CHAUSSEMY, and D. BARBIER, Appl. Phys. Letters 54, 611 (1989).
10. J. ZHU, D. BARBIER, L. MAYET, M. GAVAND, and G. CHAUSSEMY, Appl. Surface Sci. 36, 413 (1989).
11. G. A. ADEGBOYEGA and A. POGGI, phys. stat. sol. (a) 121, 181 (1990).
12. E. G. COLAS and E. R. WEBER, Appl. Phys. Letters 48, 137 (1986).
13. D. GILES, E. R. WEBER, and S. HAHN, Phys. Rev. Letters 64, 196 (1990).
14. L. PASSARI and E. SUSI, J. appl. Phys. 54, 3935 (1983).
15. M. C. CAROTTA, M. MERLI, L. PASSARI, and E. SUSI, Appl. Phys. Letters 49, 44 (1980).
16. A. KANAMORI and M. KANAMORI, J. appl. Phys. 50, 8095 (1979).
17. V. CASCARRA and ZUNINO, J. appl. Phys. 51, 4206 (1980).
18. D. K. SCHRODER, in: Gettering and Defect Engineering in Semiconductor Technology, Ed. M. KITTLER, Sci. Tech., Vaduz 1989 (p. 383).
19. F. ROLLERT, N. A. STOTWIJK, and H. MEHRER, J. Phys. D 20, 1148 (1987).
20. B. I. BOLTAKS and H. SHIH-YIN, Soviet Phys. - Solid State 2, 2383 (1961).
21. V. PANDIAN and V. KUMAR, phys. stat. sol. (a) 109, 273 (1988).
22. A. ALI, M. Z. IQBAL, and N. BABER, J. appl. Phys. 77, 3315 (1995).
23. K. SCHMALZ, F.-G. KIRSCHT, H. KLOSE, H. RICHTER, and K. TITTELBACH-HELMRICH, phys. stat. sol. (a) 100, 567 (1987).
24. K. SCHMALZ, F.-G. KIRSCHT, and K. TITTELBACH-HELMRICH, phys. stat. sol. (a) 109, 279 (1988).
25. G. A. ADEGBOYEGA and A. POGGI, phys. stat. sol. (a) 143, 373 (1994).