C-Nx thin films deposited by pulsed high energy plasma bombardment

Materials Letters

Volumn 27, Issue 4-5, 1996, Pages 125-128

  Peng, Jun ^a   Zhang, Yafai ^a   Yang, Size ^b   Chen, Guanghua ^a  

^a LANZHOU UNIVERSITY   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

Adhesion; C Nx thin films; Deposition; Plasma bombardment

Indexed keywords

ABSORPTION SPECTROSCOPY; ADHESION; DEPOSITION; HARDNESS; LIGHT ABSORPTION; NITRIDES; PLASMA APPLICATIONS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; STRUCTURE (COMPOSITION); SUBSTRATES; SYNTHESIS (CHEMICAL);

AUGER MICROPROBE; CARBON NITRIDE THIN FILMS; INFRARED ABSORPTION SPECTRUM; MICROHARDNESS MEASUREMENT; PULSED HIGH ENERGY PLASMA BOMBARDMENT;

THIN FILMS;

EID: 0030190896     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-577X(96)80005-X     Document Type: Article

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