Deposition of CeO2 films including areas with the different orientation and sharp border between them

Thin Solid Films

Volumn 280, Issue 1-2, 1996, Pages 163-166

  Kotelyanskii, I M ^a   Luzanov, V A ^a   Dikaev, Yu M ^a   Kravchenko, V B ^a   Melekh, B T ^b  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Cerium; Deposition process; Epitaxy; Surface defects

Indexed keywords

CERIUM COMPOUNDS; COMPOSITION; CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; HIGH TEMPERATURE SUPERCONDUCTORS; INTERFACES (MATERIALS); PHASE TRANSITIONS; STOICHIOMETRY; SUBSTRATES; SURFACE STRUCTURE;

BI-EPITAXIAL TRANSITION; CERIA; FILM ORIENTATION; OXYGEN PARTIAL PRESSURE; SURFACE DEFECTS; YTTRIUM BARIUM CUPRATES;

THIN FILMS;

EID: 0030190709     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08201-8     Document Type: Article

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