Optical characterization of a GaAs/AlGaAs vertical cavity surface emitting quantum well laser structure grown by MOCVD

Optics and Laser Technology

Volumn 28, Issue 5, 1996, Pages 355-361

  Wu, H ^a,b   Dawson, P ^a   Hamilton, B ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

Cavity reflectivity; Lasers (quantum well); Vertical cavity lasers

Indexed keywords

COMPUTER SIMULATION; ELECTROLUMINESCENCE; EXCITONS; LIGHT ABSORPTION; LIGHT REFLECTION; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

CAVITY REFLECTIVITY; EXCITON ABSORPTION; EXCITON TRANSITION; LASER CAVITY RESONANCE; VERTICAL CAVITY LASERS; VERTICAL CAVITY SURFACE EMITTING QUANTUM WELL LASERS;

QUANTUM WELL LASERS;

EID: 0030190646     PISSN: 00303992     EISSN: None     Source Type: Journal    
DOI: 10.1016/0030-3992(95)00111-5     Document Type: Article

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