The growth and characterization of silicon/silicon carbide heteroepitaxial films on silicon substrates by rapid thermal chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 7, 1996, Pages 3836-3840

  Wu, Kuen Hsien ^a   Fang, Yean Kuen ^a   Fang, Jen Yeu ^a   Hwang, Jun Dar ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

DHD; Graded composition process; Heteroepitaxial; RTCVD; Si SiC Si multilayer

Indexed keywords

EPITAXIAL GROWTH; EXPERIMENTS; FILM GROWTH; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MULTILAYERS; SILICON CARBIDE;

GRADED COMPOSITION PROCESS; HETEROEPITAXIAL;

SEMICONDUCTING FILMS;

EID: 0030190496     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3836     Document Type: Article

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