Effects of multi-level fermi pinning and aggregate surface area on schottky barrier heights at metal/semiconductor interfaces

International Journal of Electronics

Volumn 81, Issue 1, 1996, Pages 59-65

  Wardlaw, R S ^a   Dharmadasa, I M ^a  

^a SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GOLD; INTERFACES (MATERIALS); METHANOL; NUMERICAL ANALYSIS; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; STOICHIOMETRY; TIN; X RAY PHOTOELECTRON SPECTROSCOPY;

CADMIUM TELLURIDE; CURRENT TRANSPORT; MULTILEVEL FERMI PINNING; PHOTOLUMINESCENCE MEASUREMENT;

SCHOTTKY BARRIER DIODES;

EID: 0030190472     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072196136931     Document Type: Article

References (10)

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