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Volumn 164, Issue 1-4, 1996, Pages 465-469
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First epitaxial InP tunnel junctions grown by chemical beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL BEAM EPITAXY;
CURRENT DENSITY;
ELECTRIC CONDUCTIVITY;
EPITAXIAL GROWTH;
SEMICONDUCTING INDIUM PHOSPHIDE;
TUNNEL DIODES;
INDIUM GALLIUM ARSENIDE;
MAXIMUM SPECIFIC RESISTIVITIES;
TUNNEL JUNCTIONS;
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EID: 0030190458
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)01024-6 Document Type: Article |
Times cited : (4)
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References (6)
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