Middle infrared study of Zn1-xMnxIn2S4 layered compounds

Semiconductor Science and Technology

Volumn 11, Issue 7, 1996, Pages 1056-1058

  Fontal, B ^a   Lopez Rivera S A ^a   Martinez L ^a   Giriat, W ^b  

^a UNIVERSIDAD DE LOS ANDES   (Venezuela)

^b INSTITUTO VENEZOLANO DE INVESTIGACIONES CIENTÍFICAS   (Venezuela)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; ELECTRON TRANSPORT PROPERTIES; INFRARED SPECTROSCOPY; MOLECULAR STRUCTURE; SEMICONDUCTING ZINC COMPOUNDS;

LAYERED COMPOUNDS;

SEMICONDUCTOR MATERIALS;

EID: 0030190451     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/7/015     Document Type: Article

References (4)

1. Wakaki M and Ogawt A 1983 Nuovo Cimento D 2 1809
2. Lutz H D and Jun M 1989 Z. Anorg. Allg. Chem. 579 57
3. López-Rivera S A, Martínez L, Fontal B, Giriat W and Medina F 1995 Semicond. Sci. Technol. 10 645
4. Giriat W 1985 Phys. Status Solidi b 132 K131