Strain-induced suppression of spin splitting in asymmetric p-type quantum wells

Surface Science

Volumn 361-362, Issue , 1996, Pages 380-383

  Mauritz, O ^a   Ekenberg, U ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Envelope function approximation; Gallium arsenide; Indium arsenide; Indium phosphide; Quantum wells; Semiconductor semiconductor heterostructures

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

COMPRESSIVE STRAIN; ENVELOPE FUNCTION APPROXIMATION; SEMICONDUCTOR SEMICONDUCTOR HETEROSTRUCTURE; STRAIN INDUCED SUPPRESSION; TENSILE STRAIN;

BAND STRUCTURE;

EID: 0030190288     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00426-8     Document Type: Article

References (7)

1. S.W. Corzine, R.-H. Yan and L.A. Coldren, in: Quantum Well Lasers, Ed. P.S. Zory, Jr. (Academic Press, San Diego, 1991) p. 72.
2. A. Ghiti and U. Ekenberg, Semicond. Sci. Technol. 9 (1994) 1575.
3. See, for example, J.P. Eisenstein, H.L. Störmer, V. Narayanamurti, A.C. Gossard and W. Wiegmann, Phys. Rev. Lett. 53 (1984) 2579.
4. J.M. Luttinger and W. Kohn, Phys. Rev. 97 (1955) 869.
5. U. Ekenberg, W. Batty and E.P. O'Reilly, J. Physique 48 (1987) C5-553.
6. M. Altarelli, Phys. Rev. B 28 (1983) 842.
7. M.P.C.M. Krijn, Semicond. Sci. Technol. 6 (1991) 27.