Effect of spacer layer on quantum interference in double-barrier resonant tunneling structures

Surface Science

Volumn 361-362, Issue , 1996, Pages 235-238

  Belyaev, A E ^a   Vitusevich, S A ^a   Figielski, T ^b   Glavin, B A ^a   Konakova, R V ^a   Kravchenko, L N ^c   Makosa, A ^b   Wosinski, T ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b INSTITUTE OF PHYSICS   (Poland)

^c Res Inst of Molecular Electronics   (Russian Federation)

Author keywords

Electrical transport measurements; Gallium arsenide; Molecular beam epitaxy; Quantum wells; Semi empirical models and model calculations; Semiconductor semiconductor heterostructures; Tunneling

Indexed keywords

ELECTRON RESONANCE; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; PHONONS; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

COLLECTOR; DOUBLE BARRIER RESONANT TUNNELING STRUCTURES; EMITTER; SEMI EMPIRICAL MODELS; SEMICONDUCTOR SEMICONDUCTOR HETEROSTRUCTURE; SPACE LAYERS;

ELECTRON TUNNELING;

EID: 0030190154     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00392-5     Document Type: Article

References (2)

1. T.W. Hickmott, P.M. Solomon, F.F. Fang and F. Stern, Phys. Rev. Lett. 52 (1984) 2053.
2. A.E. Belyaev, S.A. Vitusevich, R.V. Konakova, T. Figielski, A. Makosa, T. Wosinski and L.N. Kravchenko, JETP Lett. 60 (1994) 403.