Naturally formed GaAs quantum dots

Surface Science

Volumn 361-362, Issue , 1996, Pages 814-817

  Gammon, D ^a   Snow, E S ^a   Katzer, D S ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Gallium arsenide; Photoluminescence; Quantum dots; Quantum wells; Semiconductor semiconductor heterostructures

Indexed keywords

ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS;

ACOUSTIC PHONONS; INTERFACE ROUGHNESS; RESONANT EXCITATION MEASUREMENT; SEMICONDUCTOR SEMICONDUCTOR HETEROSTRUCTURES; THERMAL BROADENING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030190146     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00540-7     Document Type: Article

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