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Thin Solid Films

Volumn 280, Issue 1-2, 1996, Pages 67-75

Structural, chemical, and electrical characterisation of reactively sputtered WSx thin films

(4) Regula, M a Ballif, C a Moser, J H a,b Levy F a

a EPFL (Switzerland)

b Micronas GmbH Freiburg (Germany)

Author keywords

Chalcogens; Electron microscopy; Sputtering; Tungsten

Indexed keywords

ACTIVATION ENERGY; COMPOSITION; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC PROPERTIES; ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MORPHOLOGY; SPUTTER DEPOSITION; THIN FILMS; TUNGSTEN COMPOUNDS;

BASAL ORIENTATION; CARRIER TRANSPORT; CHALCOGEN; EDGE ORIENTED PLATELETS; LAMELLAR MICROSTRUCTURE; SHEET RESISTANCE; TUNGSTEN SULFIDE;

SEMICONDUCTING FILMS;

EID: 0030190073 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(95)08206-9 Document Type: Article

Times cited : (94)

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