Coherent properties of in-plane gated InGaAs/AlGaAs submicron rings

Surface Science

Volumn 361-362, Issue , 1996, Pages 747-750

  Bykov, A A ^a   Litvin, L V ^a   Moshchenko, S P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COHERENT LIGHT; ELECTRONIC DENSITY OF STATES; ELECTROSTATICS; HETEROJUNCTIONS; INTERFEROMETRY; MAGNETIC FIELDS; MAGNETIC VARIABLES MEASUREMENT; MAGNETORESISTANCE; OPTICAL PROPERTIES; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ALUMINUM GALLIUM ARSENIDE; COHERENT PROPERTIES; IN PLANE GATED RINGS; INDIUM GALLIUM ARSENIDE; MAGNETORESISTANCE AHARONOV-BOHM OSCILLATIONS; MAGNETORESISTANCE MEASUREMENT; MICROWAVE MESOSCOPIC; SUBMICRON RINGS; SYMMETRY OF INTERFERENCE PROCESSES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030189568     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00525-0     Document Type: Article

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