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Volumn 361-362, Issue , 1996, Pages 357-362

Optical spectroscopy of neutral and charged excitons in GaAs/AlGaAs quantum wells in high magnetic fields

(3) Finkelstein, Gleb a Shtrikman, Hadas a Bar Joseph, Israel a

a WEIZMANN INSTITUTE OF SCIENCE (Israel)

Author keywords

Gallium arsenide; Molecular beam epitaxy; Photoluminescence; Quantum wells; Semiconductor semiconductor heterostructures

Indexed keywords

HETEROJUNCTIONS; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

CHARGED EXCITON; GATE VOLTAGE; NEUTRAL EXCITON; SEMICONDUCTOR SEMICONDUCTOR HETEROSTRUCTURES; TWO DIMENSIONAL ELECTRON GAS;

EXCITONS;

EID: 0030189546 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(96)00421-9 Document Type: Article

Times cited : (8)

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