Self-aligned cobalt disilicide/silicon Schottky barrier contacts: Fabrication, materials and electrical characterization

Semiconductor Science and Technology

Volumn 11, Issue 7, 1996, Pages 1103-1115

  Woods, N J ^a   Hall, S ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT COMPOUNDS; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; FILM GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING FILMS; SILICON COMPOUNDS; VAPOR PHASE EPITAXY;

SCHOTTKY BARRIER DIODES;

EID: 0030189468     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/7/023     Document Type: Article

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