Non-equilibrium acoustic phonon-assisted tunnelling in GaAs/(AlGa)As double barrier devices

Surface Science

Volumn 361-362, Issue , 1996, Pages 181-184

  Ouali, F F ^a   Zinov'ev, N N ^b   Challis, L J ^a   Akimov, A V ^b   Hill, D N ^a   Sheard, F W ^a   Henini, M ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Gallium arsenide; Heterojunctions; Phonons; Semiconductor semiconductor heterostructures; Tunnelling

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; HETEROJUNCTIONS; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES;

ACOUSTIC PHONONS; BIAS VOLTAGE; DOUBLE BARRIER DEVICES; ELECTRICAL PULSES; MISMATCH THEORY; PHONON ENERGY; PHONON SIGNAL; SEMICONDUCTOR-SEMICONDUCTOR HETEROSTRUCTURES;

ELECTRON TUNNELING;

EID: 0030189405     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00371-8     Document Type: Article

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