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0342343551
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A 40 GHz D-type flip-flop using AlGaAs/GaAs HBT's
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0026995953
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39.5 GHz static frequency divider implemented in AlInAs/GaInAs HBT technology,"
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M. Hafizi, J. F. Jensen, R. A. Metzger, W. E. Stanchina, D. B. Rensch, and Y. K. Allen, "39.5 GHz static frequency divider implemented in AlInAs/GaInAs HBT technology," IEEE Electron Device Lett., vol. 13, pp. 612-614, Dec. 1992.
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0029271461
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Sub-20 ps ECL circuits with high performance super self-aligned selectively grown SiGe base (SSSB) bipolar transistor
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0027565802
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A. Felder, R. Stengl, J. Hauenschild, H.-M. Rein, and T. F. Meister "25 Gb/s decision circuit, 34 Gb/s multiplexer, and 40 Gb/s demultiplexer IC in selective epitaxial Si bipolar technology," Electron. Lett., vol. 29, pp. 525-527, Mar. 1993.
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0028752390
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Si-analog IC's for 20 Gb/s optical receiver
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M. Soda, H. Tezuka, F. Sato, T. Hashimoto, S. Nakamura, T. Tatsumi, T. Suzaki, and T. Tashiro, "Si-analog IC's for 20 Gb/s optical receiver," IEEE J. Solid-State Circuits, vol. 29, pp. 1577-1582, Dec. 1994.
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0027107067
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30 Gb/s multiplexer and demultiplexer IC's in silicon bipolar technology
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H.-M. Rein, J. Hauenschild, M. Möller, W. McFarland, D. Pettengill, and J. Doernberg, "30 Gb/s multiplexer and demultiplexer IC's in silicon bipolar technology," Electron. Lett., vol. 28, pp. 97-99, Jan. 1992.
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84920724071
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A 0.6 μm Si bipolar technology with 17 ps CML gate delay and 30 GHz static frequency divider
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The Hague, The Netherlands, Sept.
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J. Bock, J. Popp, A. Felder, T. F. Meister, M. Rest, R. Schreiter, K. Aufinger, R. Köpl, S. Boguth, and L. Treitinger, "A 0.6 μm Si bipolar technology with 17 ps CML gate delay and 30 GHz static frequency divider," in Proc. ESSDERC '95, The Hague, The Netherlands, Sept. 1995, pp. 417-420.
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0347351333
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Insitu doped emitter-polysilicon for 0.5 μm silicon bipolar technology
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J. Bock, M. Franosch, H. Schäfer, H. v. Philipsborn, and J. Popp, "Insitu doped emitter-polysilicon for 0.5 μm silicon bipolar technology," in Proc. ESSDERC '95, The Hague, The Netherlands, Sept. 1995, pp. 421-424.
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0029492758
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Design aspects of 10 to 40 Gb/s digital and analog Si-bipolar IC's
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H.-M. Rein, "Design aspects of 10 to 40 Gb/s digital and analog Si-bipolar IC's," in Proc. Symp. VLSI Symp., Kyoto, June 1995, pp. 49-54.
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0025445460
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Influence of transmission-line interconnections between Gbit/s IC's on time jitter and instabilities
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84939378388
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A 22 Gb/s decision circuit and a 32 Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technology
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Minneapolis, Sept.
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J. Hauenschild, A. Felder, M. Kerber, H.-M. Rein, and L. Schmidt, "A 22 Gb/s decision circuit and a 32 Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technology," in Proc. IEEE 1992 BCTM, Minneapolis, Sept. 1992, pp. 151-154.
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14
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0027612709
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Static frequency dividers for high operating speed (25 GHz, 170 mW) and low power consumption (16 GHz, 8 mW) in selective epitaxial Si bipolar technology
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June
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A. Felder, R. Stengl, J. Hauenschild, H.-M. Rein, and T. F. Meister, "Static frequency dividers for high operating speed (25 GHz, 170 mW) and low power consumption (16 GHz, 8 mW) in selective epitaxial Si bipolar technology," Electron. Lett., vol. 29, pp. 1072-1073, June 1993.
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15
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0026156292
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Demonstration of the retiming capability of a silicon bipolar time-division multiplexer operating up to 24 Gb/s
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0029354345
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50 Gb/s time-division multiplexer in Si-bipolar technology
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18
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5844228760
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Design considerations of 10 to 50 Gb/s digital and analog Si-bipolar IC's
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H.-M. Rein and M. Möller, "Design considerations of 10 to 50 Gb/s digital and analog Si-bipolar IC's," to be published in IEEE J. Solid-State Circuits.
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IEEE J. Solid-state Circuits
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Rein, H.-M.1
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0027682370
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Coplanar-waveguide test fixture for characterization of high-speed digital circuits up to 40 Gbit/s
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0028499206
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A versatile Si-bipolar driver circuit with high output voltage swing for external and direct modulation of laser diodes in 10 Gb/s optical fiber links
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Sept.
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H.-M. Rein, R. Schmid, P. Weger, T. Smith, T. Herzog, and R. Lachner, "A versatile Si-bipolar driver circuit with high output voltage swing for external and direct modulation of laser diodes in 10 Gb/s optical fiber links," IEEE J. Solid-State Circuits, vol. 29, pp. 1014-1021, Sept. 1994.
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