Weak localisation in ballistic cavities filled with antidot arrays

Surface Science

Volumn 361-362, Issue , 1996, Pages 709-713

  Lutjering G ^a   Richter, K ^b   Weiss, D ^a   Mao, J ^a   Blick, R H ^a   Von Klitzing, K ^a   Foxon, C T ^c  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF AUGSBURG   (Germany)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

Electrical transport; Gallium arsenide; Heterojunctions; Semiconductor semiconductor heterostructures

Indexed keywords

ELECTRODYNAMICS; GEOMETRY; HETEROJUNCTIONS; LIGHT MODULATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

BALLISTIC WEAK LOCALIZATION; CHAOTIC SYSTEM; SEMICONDUCTOR SEMICONDUCTOR HETEROSTRUCTURES;

QUANTUM THEORY;

EID: 0030188926     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00505-5     Document Type: Article

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