Zinc diffusion in tellurium doped gallium antimonide

Journal of Electronic Materials

Volumn 25, Issue 7, 1996, Pages 1108-1112

  Conibeer, G J ^a   Willoughby, A F W ^a   Hardingham, C M ^b   Sharma, V K M ^c  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b EVV Ltd   (United Kingdom)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Diffusion; Dissociative; Gallium antimonide; Substitutional interstitial; Zinc

Indexed keywords

DIFFUSION; DOPING (ADDITIVES); INTERMETALLICS; TELLURIUM; ZINC;

DIFFUSION COEFFICIENTS; GALLIUM ANTIMONIDES; SUBSTITUTIONAL INTERSTITIAL VACANCY;

GALLIUM ALLOYS;

EID: 0030181190     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02659911     Document Type: Article

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