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Volumn 6, Issue 1-2, 1996, Pages 111-116

InAs-based laser double heterostructures with p-n junction in the active region

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; ENERGY GAP; FABRICATION; FERMI LEVEL; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPECTROSCOPY;

EID: 0030181054     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-3467(96)00027-4     Document Type: Article
Times cited : (1)

References (12)
  • 10
    • 0004005306 scopus 로고
    • Wiley, New York
    • S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981); L. Cheng and K. Ploog, Eds., Molecular Beam Epitaxy and Heterostructures (1989).
    • (1981) Physics of Semiconductor Devices
    • Sze, S.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.