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Volumn 6, Issue 1-2, 1996, Pages 111-116
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InAs-based laser double heterostructures with p-n junction in the active region
a a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CALCULATIONS;
ELECTROLUMINESCENCE;
ELECTRON TRANSITIONS;
ENERGY GAP;
FABRICATION;
FERMI LEVEL;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DOPING;
SPECTROSCOPY;
DOUBLE HETEROSTRUCTURES;
RADIATIVE RECOMBINATION;
RADIATIVE TRANSITIONS;
HETEROJUNCTIONS;
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EID: 0030181054
PISSN: 09253467
EISSN: None
Source Type: Journal
DOI: 10.1016/0925-3467(96)00027-4 Document Type: Article |
Times cited : (1)
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References (12)
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