Oxidation of ordered In overlayers on Si(111): An atomic picture of oxidation by STM

Surface Science

Volumn 357-358, Issue , 1996, Pages 740-747

  Kraft, J ^a   Netzer, F P ^a  

^a UNIVERSITY OF GRAZ   (Austria)

Author keywords

Indium; Metal semiconductor interfaces; Oxidation; Oxygen; Scanning tunneling microscopy; Scanning tunneling spectroscopies; Silicon; Surface chemical reaction; Surface stress

Indexed keywords

ADSORPTION; CHEMICAL REACTIONS; ELECTRON SPECTROSCOPY; INTERFACES (MATERIALS); NUCLEATION; OXIDATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE PHENOMENA; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACES;

ADSORBED OXYGEN ATOMS; ATOMIC PICTURE; INDIUM SURFACES; ORDERED INDIUM OVERLAYERS; SCANNING TUNNELING SPECTROSCOPY; SURFACE CHEMICAL REACTIONS; SURFACE STRESS;

INDIUM;

EID: 0030173155     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00256-7     Document Type: Article

References (19)

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2. The ordered In-Si(111) surface structures have been observed first, using LEED, by Lander and Morrison, J. Appl. Phys. 36 (1965) 1706; The phase diagram has been specified by Kawaji, Baba and Kinbara, Appl. Phys. Lett. 34 (1979) 748; Surf. Sci. 85 (1979) 29.
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