Band mapping of in situ Cs intercalated transition metal dichalcogenides

Surface Science

Volumn 357-358, Issue , 1996, Pages 345-349

  Brauer, H E ^a   Starnberg, H I ^a   Hughes, H P ^b   Holleboom, L J ^c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c LUND UNIVERSITY   (Sweden)

Author keywords

Angle resolved photoemission; Compound formation; Single crystal surfaces; Surface electronic phenomena; Transition metal dichalcogenides

Indexed keywords

BAND STRUCTURE; CESIUM; DEPOSITION; ELECTRON TRANSITIONS; ENERGY GAP; MATHEMATICAL MODELS; PHOTOEMISSION; SINGLE CRYSTALS; SPECTROSCOPY; SURFACE PHENOMENA; SURFACES;

ANGLE RESOLVED PHOTOEMISSION; BAND MAPPING; COMPOUND FORMATION; RIGID BAND MODEL; SURFACE ELECTRONIC PHENOMENA; TRANSITION METAL DICHALCOGENIDES;

INTERCALATION COMPOUNDS;

EID: 0030173063     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00179-3     Document Type: Article

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